Product description: N-MOSFET T2910 100 V / 21 A - THT - TO220
N-MOSFET typetransistor in TO220 housing. The circuit has the following parameters: VDSS 100 V, Id 21 A and resistance 24 mΩ. The element is designed for THT through-hole assembly.
Differences between unipolar and bipolar transistors
Bipolar transistors are distinguished by the fact that as the temperature increases, the collector current also increases, which may make it impossible to directly connect several transistors in parallel.
MOSFET (unipolar) transistors are very sensitive to static electricity due to their technical design. The maximum voltage UGS in most models is usually around 20 V, which means that it can easily be exceeded without any awareness, even by touching the transistor in a completely dry room.
N-MOSFET transistor T2910 100 V / 21 A - THT - TO220.
The N-MOSFET T2910 transistor has three leads designed for THT mounting.
Transistor specifications
- Manufacturer: Alfa & Omega Semiconductor
- Manufacturer identification: AOT2910L
- Transistor type: N-MOSFET
- Polarity: unipolar
- Maximum drain-source voltage: 100 V
- Drain current: 21 A
- Gate to source voltage: +/- 20 V
- Resistance in conduction state: 24 mΩ
- Housing: TO220
- Mounting: THT through-hole
- Gate charge: 7 nC
- Dissipated power: 25 W
- Channel type: Enriched
