SenseCAP wireless barometer - LoRaWAN 868MHz - Seeedstudio 114991729
Index: SEE-16981
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Filament Polymaker PolySmooth PVB 1,75mm, 0,75kg - Electric Blue
Index: PLM-22741
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Bipolar transistors
A bipolar transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. Unipolar transistors, such as field-effect transistors (FETs), use only one type of charge carrier to transport current in their structure. BJT elements use two PN junctions between two types of semiconductors, n-type and p-type, for operation. These elements are available as single discrete components or manufactured in integrated circuits, often in large quantities. See if you can find the right bipolar transistors for your project in our range.
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Bipolar transistor NPN BC337-40 45V / 0,8A - 5pcs
Bipolar transistor NPN, 45 V, 0.8 A. Pinout: CBE. Price for 5 pieces.
Index: UCC-01239
Index: UCC-01239
Bipolar transistor NPN BC547B 50V/0,1A - 5pcs
Bipolar transistor NPN, 50 V, 100 mA. Pinout: CBE. Price for 5 pieces.
Index: UCC-00254
Index: UCC-00254
Bipolar transistor NPN BC338-40 25V/0,8A - 5pcs
NPN bipolar transistor, 25 V, 0.8 A. Lead arrangement: CBE. Price for 5 pieces .
Index: UCC-03545
Index: UCC-03545
Bipolar transistor NPN Darlington MPSA29 100V/0.8A
Bipolar transistor NPN, 100 V, 800 mA. Pinout: ECB. Price for 1 piece.
Index: UCC-05023
Index: UCC-05023
Bipolar transistor PNP BC556B 65V/0,1A - 5pcs.
Set of five PNP BC556B bipolar transistors in TO-92 package. Transistors equipped with three leads: emitter, base, collector. They are designed for through-hole THT...
Index: AKS-19033
Index: AKS-19033
Bipolar transistor NPN BD911 100V/15A - 5 pcs.
NPN bipolar transistor, 100 V, 15 A. Lead arrangement: BCE. Price for 5 pieces.
Index: UCC-07875
Index: UCC-07875
Bipolar transistor NPN 2N2222A ST - 5pcs.
Set of five NPN 2N2222A bipolar transistors in TO-92 package. Transistors are equipped with three leads: emitter, base, collector. They are designed for through-hole THT...
Index: AKS-18995
Index: AKS-18995
Test kit, electronic component tester - M12864 KIT
The set for testing and the recognition of electronic components such as bipolar transistors PNP, NPN, MOSFET transistors with channel P and N, field transistors JFET and LEDs....
Index: MOD-05056
Index: MOD-05056
Set of bipolar transistors NPN and PNP TO-92 - 15 values - E49 - 300 pcs.
Set includes 300 pcs of transistor To-92 with 15 different values, 20 pcs in each. All is closed in a little organiser.
Index: GRL-12117
Index: GRL-12117
Bipolar transistor NPN KSP13-K33 30V/0,5A - 5pcs.
Set of five bipolar NPN BC556B transistors in TO-92 package. Transistors equipped with three leads: emitter, base, collector. They are designed for through-hole THT...
Index: TME-19293
Index: TME-19293
A set of 18 types bipolar transistors in TO92 case, 10 pieces in each.
Index: UCC-07579
Index: UCC-07579
Bipolar transistor PNP BC557C 45V / 0,1A - 5pcs
Bipolar transistor PNP, 45 V / 0.1 A. Pinout: ECB. Price for 5 pieces.
Index: UCC-02063
Index: UCC-02063
Bipolar transistor NPN 2N3904 40V/0,2A - 5pcs
Bipolar transistor NPN, 40 V, 0.2 A. Pinout ECB. Price for 5 pieces.
Index: UCC-01775
Index: UCC-01775
Bipolar transistor NPN BC639 80V/1A - 5pcs
Bipolar transistor NPN, 80 V, 1 A. Pinout: ECB. Price for 5 pieces.
Index: UCC-00683
Index: UCC-00683
Bipolar transistor NPN BC546B 65V/0,1A - 5pcs.
Bipolar transistor NPN, 65 V, 0.1 A. Pinout: CBE. Price for 5 pieces.
Index: UCC-05248
Index: UCC-05248
Test kit, THT electronic components tester - BTE-056
Kit for testing and recognition of electronic components such as PNP, NPN bipolar transistors, MOSFET transistors with P and N channels and diodes. Built-in screen allows to...
Index: MOD-06282
Index: MOD-06282
Test set, tester of electronic elements THT and SMD - BTE-057
Test set for testing and recognition electronic components such as bipolar transistors PNP, NPN, MOS transistors with channel P and N, and LEDs. Built-in screen allows you to...
Index: MOD-06283
Index: MOD-06283
See also
Transistor BJT – the most basic element
The bipolar blade transistor was invented in December 1947 at Bell Telephone Laboratories by John Bardeen and Walter Brattain, working under William Shockley. The next iteration of this design, the bipolar junction transistor (BJT), was invented by Shockley a year later. This opened up enormous possibilities in electronics. Transistors replaced vacuum tubes. They are better, smaller and more energy-efficient, but the technology for producing these types of elements has changed dramatically from the time of their invention to today. However, they are still an indispensable part of every electronic circuit. Transistors not only made it possible to reduce the size of radios and televisions, but also enabled the creation of integrated circuits which often contain millions of transistors in their structure.
How are bipolar transistors made?
A bipolar transistor consists of three differently doped semiconductor regions - emitter, base and collector. These regions are P- or N-type doped and arranged alternately. Each semiconductor region is connected to a terminal, labelled accordingly - emitter (E), base (B) and collector (C). The base is located between the emitter and collector and is made of a lightly doped high resistance material. The collector surrounds the emitter region, making it almost impossible for electrons injected into the base region to escape without being collected, and the resulting common base gain value is very close to unity, thus giving the transistor a large common collector gain value.
The bipolar transistor Elements NPN and PNP differences in the structure and action
The order in which the P and N layers are arranged determines its type and operation of a bipolar transistor. BJTs are available in two types or polarities, known as PNP and NPN. An NPN transistor contains two semiconductor junctions that share a thin P doped region, while a PNP transistor contains two semiconductor junctions that share a thin N doped region. NPN is one of the two types of bipolar transistors. It consists of a P-doped semiconductor layer between two N-doped layers. The small current entering the base is amplified to produce a large collector and emitter current. When there is a positive potential difference, measured from the base to the emitter, the transistor is active. PNP transistors are built in exactly the opposite way. They also have the opposite action. They are active when there is no voltage at the base.