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P-MOSFET transistor IRF4905 -55V/-74A - THT

Index: DNG-25087
The IRF4905 transistor is a high-current P-MOSFET electronic component with a maximum drain-source voltage of -55 V , drain current of -74 A and power dissipation of 200 W, with an on-state resistance of 0.02 Ω. It is ideal for driving large currents at low voltages, providing high efficiency and thermal reliability.
P-MOSFET transistor IRF4905 -55V/-74A - THT
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Manufacturer: OEM

Product description: P-MOSFET transistor IRF4905 -55 V / -74 A - THT

The IRF4905 is a high-current P-MOSFET electronic component with a maximum drain-source voltage of -55 V and a maximum drain current of -74 A at 25°C. The threshold voltage of this transistor is in the range of -2 V to -4 V , and the maximum gate-source voltage difference is ±20 V. It is also characterized by a power loss of 200 W and an on-state resistance of 0.02 Ω at a gate-source voltage of -10 V, which ensures high efficiency when conducting large currents . The IRF4905 transistor is ideal for applications where high current control at low voltages is required while providing thermal stability and high reliability.

Also check out other types of transistors available in our offer.

P-MOSFET IRF4905 transistor -55 V / -74 A - THT.

The maximum operating temperature of the transistor is 175°C.

IRF4905 Transistor Specification

  • Transistor type: P-MOSFET
  • Drain-Source Voltage (Vds): -55 V
  • Drain Current (Id): -74 A @ 25°C
  • Gate Threshold Voltage (Vgs(th)): -2 V to -4 V
  • Maximum Gate Source Voltage Difference (Vgs): ±20 V
  • Maximum power loss: 200 W
  • Maximum operating temperature: 175°C
  • On-state resistance: 0.02 Ω for gate-source voltage difference (Vgs) -10 V
  • Housing: TO-220AB

Package width 6.2 cm
Package height 9 cm
Package depth 1 cm
Package weight 0.003 kg

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