Product description: P-MOSFET transistor IRF4905 -55 V / -74 A - THT
The IRF4905 is a high-current P-MOSFET electronic component with a maximum drain-source voltage of -55 V and a maximum drain current of -74 A at 25°C. The threshold voltage of this transistor is in the range of -2 V to -4 V , and the maximum gate-source voltage difference is ±20 V. It is also characterized by a power loss of 200 W and an on-state resistance of 0.02 Ω at a gate-source voltage of -10 V, which ensures high efficiency when conducting large currents . The IRF4905 transistor is ideal for applications where high current control at low voltages is required while providing thermal stability and high reliability.
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P-MOSFET IRF4905 transistor -55 V / -74 A - THT.
The maximum operating temperature of the transistor is 175°C.
IRF4905 Transistor Specification
- Transistor type: P-MOSFET
- Drain-Source Voltage (Vds): -55 V
- Drain Current (Id): -74 A @ 25°C
- Gate Threshold Voltage (Vgs(th)): -2 V to -4 V
- Maximum Gate Source Voltage Difference (Vgs): ±20 V
- Maximum power loss: 200 W
- Maximum operating temperature: 175°C
- On-state resistance: 0.02 Ω for gate-source voltage difference (Vgs) -10 V
- Housing: TO-220AB
