Product description: N-MOSFET transistor IRF740 400 V / 10 A - THT
The IRF740 is an N-MOSFET that is designed for high voltage and high current operation. This component supports a drain-source voltage of up to 400 V and a drain current of up to 10 A. Its gate threshold voltage is 10 V, which means that to fully turn it on, this value of the voltage between the gate and the source is needed. The maximum voltage of the potential difference between the gate and the source is ±20 V. The transistor is also characterized by a relatively low resistance in the on state of 0.55 Ω, which translates into low losses power . The maximum power loss of this element is 125 W, thanks to which it is used in high-power systems , such as converters , inverters or UPS power supplies . It can operate at temperatures up to 150°C and is available in a TO-220 package.
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N-MOSFET transistor IRF740 400 V / 10 A - THT.
The maximum operating temperature of the transistor is 150°C.
IRF740 Transistor Specification
- Transistor type: N-MOSFET
- Drain-Source Voltage (Vds): 400 V
- Drain Current (Id): 10 A
- Gate Threshold Voltage (Vgs(th)): 10 V
- Maximum Gate Source Voltage Difference (Vgs): ±20 V
- Maximum power loss: 125 W
- Maximum operating temperature: 150°C
- On state resistance: 0.55 Ω
- Housing: TO-220
