Transistors unipolarne MOS transistor with a channel of type N.
Ampgenol FCI Clincher connector - female 3x - SparkFun COM-14196
Index: SPF-09141
- Reduced price
- Promotion
I2C / UART distance and gesture sensor - 30cm - SparkFun SEN-13162
Index: SPF-09329
- On sale!
- Promotion
- Reduced price
- Promotion
- On sale!
- Promotion
- Reduced price
- Promotion
Arduino Portenta Vision Shield - Ethernet - shield with camera
Index: ARD-18428
- Reduced price
- Promotion
N MOSFET
Products: 13
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Transistor N-MOSFET IRF520NPBF - THT - 5pcs.
Vds: 100 V Id: 9,7 A. Rdson 0.2 Ohm. Case: TO-220.
Index: UCC-02610
Index: UCC-02610
N-MOSFET IRFZ44N - THT - 5 pcs.
Vds: 55 V. Id: 41 A. Power: 83 watts. Rds: 0.0175 Ω. Housing TO-220. Transistors are sold in sets of 5 pieces.
Index: KAB-06494
Index: KAB-06494
Transistor N-MOSFET IRLZ44N - THT - 5pcs
Vds: 55 V. Id: 47 A. Rdson: 0,022 Ohms. Case: TO-220. Items are sold in sets of 5 pieces.
Index: UCC-01950
Index: UCC-01950
Mini switch Slide MOSFET LV 2-20V/6A - with protection before reverse current - Pololu 2810
The executive module with a MOSFET transistor with a pair of channels P to control devices with higher current consumption than allowed by the control system, for example, a...
Index: PLL-04852
Index: PLL-04852
Transistor N-MOSFET 2N7000 - 10pcs.
Unipolar transistor N-MOSFET THT, 60 V, 0.2 A. Price for 10 pieces.
Index: UCC-08318
Index: UCC-08318
Transistor N-MOSFET IRFZ34N - THT - 5pcs.
N-MOSFET type transistor in TO220 housing. The circuit has the following parameters: VDSS 55 V, Id 29 A and 0.040 Ω resistance . The element is designed for THT threaded...
Index: AKS-18306
Index: AKS-18306
Transistor N-MOSFET IRL540NPBF - THT - 5pcs
Vds: 100 V Id: 36A. Rdson: 0,044 Ohm. Case: TO-220. Items are sold in sets of 5 pieces.
Index: UCC-00127
Index: UCC-00127
Transistor N-MOSFET T2910 100V/21A - THT - TO220
N-MOSFET type transistor in TO220 housing. The circuit has the following parameters: VDSS 100 V, Id 21 A and resistance 24 mΩ . The element is designed for through-hole THT...
Index: TME-20609
Index: TME-20609
N-MOSFET tranzistor STP10NK60ZFP - THT - 5pcs
Unipolar transistor type N-MOSFET STP10NK60ZFP . The drain voltage is 600 V , while the drain current is 5.7 A . Closed in TO220FP casing mounted in a THT way.
Index: UCC-17314
Index: UCC-17314
Test kit, electronic component tester - M12864 KIT
The set for testing and the recognition of electronic components such as bipolar transistors PNP, NPN, MOSFET transistors with channel P and N, field transistors JFET and LEDs....
Index: MOD-05056
Index: MOD-05056
N-MOSFET transistor IRF740 400V/10A - THT
The IRF740 is an N-MOSFET designed for operation at voltages up to 400 V and currents up to 10 A. It features a low on-resistance of 0.55 Ω and a maximum power dissipation...
Index: DNG-25089
Index: DNG-25089
Vds: 100 V Id: 22 A. Power: 85W Rds On: 0.055 Ohm. TO-220 case. Items are sold in sets of 5 pieces.
Index: UCC-00731
Index: UCC-00731
Test kit, THT electronic components tester - BTE-056
Kit for testing and recognition of electronic components such as PNP, NPN bipolar transistors, MOSFET transistors with P and N channels and diodes. Built-in screen allows to...
Index: MOD-06282
Index: MOD-06282
See also
Why an N-type MOSFET?
MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is one of the most popular types of transistors used in electronics. It consists of a gate, a drain, a source, a semiconductor and an insulator (or N-channel space). Contacts are made to the drain and the source - between them there is a surface of the semiconductor covered with a thin surface of the insulator. These transistors operate using mainly the properties of N-type and P-type semiconductors. They are formed by mixing silicon with an element having one more valence electron (donors) - an N-type semiconductor is formed, or one less valence electron (acceptors) - a P-type semiconductor is formed. When atoms of an element having one more valence electron than in silicon (donors) are added to silicon, an N-type semiconductor is formed. The situation is similar when atoms of an element having one less valence electron (acceptors) are added to silicon - a P-type semiconductor is created. N MOSFETs are N-channel transistors - the substrate has admixtures of acceptors, while the drain and source have admixtures of donors.
What do we offer in this section?
In our N MOSFET offer we have a wide range of N-type transistors, mini switches and kits for testing electronic components. These devices are very versatile - they are able to recognize a wide range of different components and specify their properties. It is a very helpful tool for any electronics. If, for example, you have electronic components and you don't know what they are (for example, because the paint has washed away and you can't recognize them by shape), you will find out what they are and what their properties. If it is a resistor, you will get information about its resistance, and if it is a capacitor, you will find out what its capacity is. The devices are designed to recognize elements made in THT technology (for threaded assembly) and SMD (for surface assembly). They can recognize MOSFET transistors (with P and N channels), bipolar transistors (PNP and NPN) and such elements as resistors, capacitors or diodes. Some devices also have the function of a small rectangular signal generator, a PWM signal generator and a frequency meter.
Transistors
In this category the main products are of course transistors. We have, among others, double SMD transistors (enclosed in SO-08 enclosure) - maximum drain current is 3.5 A, maximum voltage cannot exceed 20 V, resistance is about 0.1 Ω. There are also single SMD transistors available in packs of 5 pieces - maximum voltage for them is 30 V, current is 5 A, and resistance is only 0.029 Ω. In packs of 5 pieces we also offer models closed in SOT-223 (SMD) with a maximum drain current of 2 A, maximum voltage of 55 V, closed in MICRO3 (SMD) with a maximum drain current of 4.2 A, maximum voltage of 20 V and resistance of 0.045 Ω and closed in SOT-23 (SMD) with a maximum drain current of 1.2 A, maximum voltage of 20 V and resistance of 0.25 Ω. We also have transistors designed for threaded assembly (THT) - in TO-220 enclosure, with maximum drain current 9.7 A, maximum voltage 100 V and resistance 0.2 Ω, in TO-220 enclosure, with maximum drain current 26 A, maximum voltage 50 V and resistance 0.55 Ω and 10 each in TO92 enclosures with maximum drain current 0.2 A, maximum voltage 60 V and resistance 9 Ω.5 each in TO-220 enclosures with a maximum drain current of 41 A, a maximum voltage of 55 V and a resistance of 0,0175 Ω, 5 each in TO-220 enclosures with a maximum drain current of 22 A, a maximum voltage of 100 V and a resistance of 0,055 Ω5 pieces each with a maximum drain current of 36 A, a maximum voltage of 100 V and a resistance of 0,044 Ω and 5 pieces each with a maximum drain current of 47 A, a maximum voltage of 55 V and a resistance of 0,022 Ω.